High resistivity and ultrafast carrier lifetime in argon implanted GaAs

Carrier lifetime versus anneal in low temperature growth GaAs

The photoexcited carrier lifetimes in ex situ-annealed low temperature growth GaAs are measured with a femtosecond transient absorption experiment. The study encompassed two low temperature growth GaAs films with approximately 0.3% and 0.9% excess arsenic incorporated during growth. The observed lifetimes are found to be a function of the spacing of arsenic precipitates formed during the 30 s a...

Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission

J. Lloyd-Hughes,1,* E. Castro-Camus,1 M. D. Fraser,2 C. Jagadish,2 and M. B. Johnston1 1Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU United Kingdom 2Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Institute of Advanced Studies, Australian National University, Canberra ACT 0200, Australia (Rec...

Visualization of carrier dynamics in p(n)-type GaAs by scanning ultrafast electron microscopy.

Four-dimensional scanning ultrafast electron microscopy is used to investigate doping- and carrier-concentration-dependent ultrafast carrier dynamics of the in situ cleaved single-crystalline GaAs(110) substrates. We observed marked changes in the measured time-resolved secondary electrons depending on the induced alterations in the electronic structure. The enhancement of secondary electrons a...

DIFFUSION OF SILICON IN ION IMPLANTED GaAs

Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...

Ultrafast trapping times in ion implanted InP